دیتاشیت FCP16N60N
مشخصات دیتاشیت
| نام دیتاشیت | FCP16N60, FCPF16N60 |
|---|---|
| حجم فایل | 688.176 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت FCP16N60, FCPF16N60 |
FCP16N60, FCPF16N60 Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FCP16N60N
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 134.4W
- Total Gate Charge (Qg@Vgs): 52.3nC@10V
- Drain Source Voltage (Vdss): 600V
- Input Capacitance (Ciss@Vds): 2170pF@100V
- Continuous Drain Current (Id): 16A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 5pF@100V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 170mΩ@10V,8A
- Package: TO-220
- Manufacturer: onsemi
- Series: SuperFET™
- Packaging: Tube
- Part Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
- Base Part Number: FCP16
- detail: N-Channel 600V 16A (Tc) 167W (Tc) Through Hole TO-220-3
